Hot Carrier Design Considerations for Mos Devices and Circuits
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engine…
Mehr
CHF 144.00
Preise inkl. MwSt. und Versandkosten (Portofrei ab CHF 40.00)
V301:
Libri-Titel folgt in ca. 2 Arbeitstagen
Produktdetails
- ISBN: 978-1-4684-8549-3
- EAN: 9781468485493
- Produktnummer: 14634156
- Verlag: Springer Us
- Sprache: Englisch
- Erscheinungsjahr: 2012
- Seitenangabe: 356 S.
- Masse: H23.8 cm x B17.6 cm x D2.2 cm 508 g
- Auflage: Softcover reprint of the original 1st ed. 1992
- Abbildungen: Paperback
- Gewicht: 508
13 weitere Werke von Cheng (Hrsg.) Wang:
Bewertungen
Anmelden