Dielectric Films for Advanced Microelectronics
The dielectric properties of silicon dioxide (SiO2), such as high resistivity and excellent dielectric strength, have aided the evolution of microelectronics during the past 40 years. Silica films have been successfully used over this period for both gate and interconnect applications in ultra large-scale integration (ULSI) devices. Dielectric films for gate applications need to have a higher dielectric constant, while interconnect dielectric materials need to have a lower dielectric constant, compared with SiO2. In order to maintain the high drive current and gate capacitance required of scaled MOSFETs (metal-oxide-silicon field effect trans…
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Produktdetails
Weitere Autoren: Maex, Karen / Green, Martin
- ISBN: 978-0-470-01360-1
- EAN: 9780470013601
- Produktnummer: 2997236
- Verlag: Wiley
- Sprache: Englisch
- Erscheinungsjahr: 2007
- Seitenangabe: 508 S.
- Masse: H24.4 cm x B16.8 cm x D3.4 cm 1'102 g
- Gewicht: 1102
Über den Autor
Karen Maex, IMEC Fellow, Silicon Process and Device Technology Division, Leuven, Belgium & Professor at Katholieke Universiteit LeuvenMikhail R. Baklanov, Principal Scientist, Silicon Process and Device Technology Division, IMEC, Leuven, BelgiumIMEC is the largest independent microelectronics R&D centre in Europe, with over 1250 staff. R&D ranges from the design of complex single-chip and single-package systems for telecommunications and multimedia, new process technologies for optoelectronics, photovoltaics, area-array packing, etc.
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