Photo-Induced Defects in Semiconductors
This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes w…
Mehr
CHF 92.00
Preise inkl. MwSt. und Versandkosten (Portofrei ab CHF 40.00)
V103:
Folgt in ca. 5 Arbeitstagen
Produktdetails
Weitere Autoren: Bube, Richard H. / David, Redfield
- ISBN: 978-0-521-02445-7
- EAN: 9780521024457
- Produktnummer: 2271728
- Verlag: Cambridge University Press
- Sprache: Englisch
- Erscheinungsjahr: 2006
- Seitenangabe: 232 S.
- Masse: H22.9 cm x B15.2 cm x D1.3 cm 363 g
- Abbildungen: Paperback
- Gewicht: 363
1 weiteres Werk von David Redfield:
Bewertungen
Anmelden