Heteroepitaxy of Semiconductors
Theory, Growth, and Characterization, Second Edition
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamo…
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Produktdetails
Weitere Autoren: Kujofsa, Tedi / Rago, Paul / Raphael, Johanna
- ISBN: 978-1-315-35517-7
- EAN: 9781315355177
- Produktnummer: 21413829
- Verlag: Taylor & Francis Ltd.
- Sprache: Englisch
- Erscheinungsjahr: 2016
- Seitenangabe: 659 S.
- Plattform: EPUB
- Masse: 15'636 KB
- Auflage: 2. Auflage
- Abbildungen: 869 line equations; 4506 total equations, 330 schwarz-weiße und 22 farbige Abbildungen, 49 schwarz-weiße Tabellen
Über den Autor
J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.
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