Zhiqiang Li

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Buch

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10?7??cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information… Mehr

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Produktdetails

ISBN: 978-3-662-57026-5
EAN: 9783662570265
Produktnummer: 31949636
Verlag: Springer Nature EN
Sprache: Englisch
Erscheinungsjahr: 2018
Seitenangabe: 59 S.
Masse: H23.5 cm x B15.5 cm 1'503 g
Auflage: Nachdr.
Abbildungen: Farb., s/w. Abb.
Gewicht: 1503
Sonstiges: Research

Über den Autor

Dr. Li received his Bachelor degree of Science from Sichuan University in 2009, and Ph.D from Peking University in 2014 Prizes and awards: 2009-2014, Peking University Leo KoGuan Scholarship, Chenming Hu Scholarship, Merit Student, Creative Talent Award. 2005-2009, Sichuan University National Scholarship (twice), National Encouragement Scholarship, Xinyuan Scholarship (twice), Comprehensive First-class Scholarship, Excellent Student Leader. Publications: 1. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion-Implantation after Germanidation Technique, IEEE Electron Device Lett.,vol. 33, no. 12, pp. 1687-1689, Dec. 2012. 2. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation, IEEE Electron Device Lett., vol. 34, no. 5, pp. 596-598, May. 2013. 3. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Min Li, Ming Li, Xing Zhang, and Ru Huang, Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique, IEEE Electron Device Lett., vol. 34, no. 9, pp. 1097-1099, Sep. 2013. 4. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Xing Zhang and Ru Huang, Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film, ECS Solid State Lett., Vol. 1, no. 4, pp. Q33-Q34, 2012. 5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after Germanidation Technique, The 11th ICSICT, Xi'an, 2012.