Long-Term Reliability of Nanometer VLSI Systems
Modeling, Analysis and Optimization
This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, a…
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Produktdetails
Weitere Autoren: Tahoori, Mehdi / Kim, Taeyoung / Wang, Shengcheng / Sun, Zeyu / Kiamehr, Saman
- ISBN: 978-3-030-26171-9
- EAN: 9783030261719
- Produktnummer: 31943940
- Verlag: Springer Nature EN
- Sprache: Englisch
- Erscheinungsjahr: 2019
- Seitenangabe: 460 S.
- Masse: H23.5 cm x B15.5 cm 0 g
- Auflage: 1st ed. 2019
- Abbildungen: Farb., s/w. Abb.
- Sonstiges: Research
Über den Autor
99833288
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