Ferroelectric-Gate Field Effect Transistor Memories
Device Physics and Applications
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in fe…
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Produktdetails
- ISBN: 978-94-024-1416-5
- EAN: 9789402414165
- Produktnummer: 28528974
- Verlag: Springer
- Sprache: Englisch
- Erscheinungsjahr: 2018
- Seitenangabe: 347 S.
- Masse: 757 g
- Auflage: Softcover reprint of the original 1st ed. 2016
- Abbildungen: 159 Tables, color; 150 Illustrations, color; 104 Illustrations, black and white; XVIII, 347 p. 254 illus., 150 illus. in color.
- Gewicht: 757
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