Silicon Carbide and Related Materials 2012

Volume is indexed by Thomson Reuters CPCI-S (WoS).The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from &quote;Bulk growth&quote; to &quote;Device and application&quote;. The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition.The 280 papers delivered during the September 2012 ECSCRM are arranged intoten sessions on bulk growth of silicon carbide, graphen growth, epitaxialgrowth 4H and 3C, characterization of material and point defects, interfacecharacterization, electrical and structural characterization, MOSprocessing, and device applications. Seven papers from Linkoping Universityreport on electrical characterization of PiN diodes with p+ layerselectivity grown by VLS transport, dry etching of nanopillars, the opticalproperties of a niobium center, the photoluminescence of 8H SiC, and surfacepreparation of off-axis 4H SiC.Other topics include morphology optimization of very thick epitaxial layers,nickel oxide as a dielectric for GaN and SiC devices, multi-wire electricaldischarge slicing, and the impact of AIN spacer thickness on electronmobility.