Defects in HIgh-k Gate Dielectric Stacks
Nano-Electronic Semiconductor Devices
The goal of this NATO Advanced Research Workshop (ARW) entitled Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects…
Mehr
CHF 276.00
Preise inkl. MwSt. und Versandkosten (Portofrei ab CHF 40.00)
V103:
Folgt in ca. 5 Arbeitstagen
Produktdetails
- ISBN: 978-1-4020-4366-6
- EAN: 9781402043666
- Produktnummer: 2257640
- Verlag: Springer Netherlands
- Sprache: Englisch
- Erscheinungsjahr: 2006
- Seitenangabe: 508 S.
- Masse: H23.3 cm x B15.5 cm x D2.7 cm 755 g
- Auflage: 2006
- Abbildungen: Paperback
- Gewicht: 755
11 weitere Werke von Evgeni (Hrsg.) Gusev:
Bewertungen
Anmelden