Sub-Micron Semiconductor Devices
Design and Applications
This text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. It covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail.
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Produktdetails
Weitere Autoren: Shekhar, Deep (Hrsg.) / Kumar, Naveen (Hrsg.)
- ISBN: 978-0-367-64809-1
- EAN: 9780367648091
- Produktnummer: 37900012
- Verlag: Taylor and Francis
- Sprache: Englisch
- Erscheinungsjahr: 2022
- Seitenangabe: 392 S.
- Masse: H25.4 cm x B17.8 cm 916 g
- Abbildungen: Farb., s/w. Abb.
- Gewicht: 916
Über den Autor
Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST, ISRO and many more projects.Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog CMOS integrated Circuits, Nano scale Device design and simulation etc.Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.
2 weitere Werke von Ashish (Hrsg.) Raman:
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