Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits
As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical mode…
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Produktdetails
Weitere Autoren: Ismail, Mohammed
- ISBN: 978-1-4615-3150-0
- EAN: 9781461531500
- Produktnummer: 38252357
- Verlag: Springer US
- Sprache: Englisch
- Erscheinungsjahr: 2012
- Seitenangabe: 190 S.
- Plattform: PDF
- Auflage: 1993
- Reihenbandnummer: 211
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