Science and Technology of Defects in Silicon
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments…
Mehr
CHF 70.90
Preise inkl. MwSt. und Versandkosten (Portofrei ab CHF 40.00)
Versandkostenfrei
Produktdetails
Weitere Autoren: Chantre, A. (Hrsg.) / Wagner, P. (Hrsg.)
- ISBN: 978-0-08-098364-6
- EAN: 9780080983646
- Produktnummer: 36162380
- Verlag: Elsevier Science & Techn.
- Sprache: Englisch
- Erscheinungsjahr: 2014
- Seitenangabe: 518 S.
- Plattform: PDF
2 weitere Werke von C. A. J. (Hrsg.) Ammerlaan:
Bewertungen
Anmelden