Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes t…
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Produktdetails
Weitere Autoren: Dierolf, Volkmar (Hrsg.)
- ISBN: 978-90-481-2876-1
- EAN: 9789048128761
- Produktnummer: 4740318
- Verlag: Springer-Verlag GmbH
- Sprache: Englisch
- Erscheinungsjahr: 2010
- Seitenangabe: 416 S.
- Masse: H24.1 cm x B16.0 cm x D2.5 cm 723 g
- Abbildungen: 20 black & white tables, 10 black & white halftones
- Reihenbandnummer: 124
- Gewicht: 723
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