Kinetic Studies in GeO2/Ge System
A Retrospective from 2021
This title investigates reaction kinetics in GeO2/Ge systems, aiming to demonstrate the fundamentals of the GeO2/Ge interface and to give insight into the distinctive features and performance of Ge (germanium) applied to advanced complementary metal oxide semiconductor (CMOS) devices.The book first reviews the development of MOS technology and discusses the potentials of emerging Ge and the challenges facing it, as a contentious channel material once promising to replace Si (silicon) for advanced nodes. The study systematically analyses the following aspects of GeO2/Ge stacks that will shed light on the characteristics and reaction principles…
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V214:
Noch nicht erschienen, Mai 2022
Produktdetails
- ISBN: 978-1-00-058136-2
- EAN: 9781000581362
- Produktnummer: 37959572
- Verlag: Taylor & Francis Ltd.
- Sprache: Englisch
- Erscheinungsjahr: 2022
- Seitenangabe: 280 S.
- Plattform: PDF
- Auflage: 1. Auflage
- Abbildungen: 102 schwarz-weiße Abbildungen, 14 schwarz-weiße Fotos, 88 schwarz-weiße Zeichnungen, 4 schwarz-weiße Tabellen
Über den Autor
Sheng-Kai Wang is a professor in the Institute of Microelectronics at Chinese Academy of Sciences (IMECAS), China, and Director General of Youth Innovation Promotion Association of IMECAS. He has been engaged in Ge, III-V, SiC in MOS technology for years and has published more than 100 papers and authorized more than 40 patents.
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