Heteroepitaxial Growth of GaN: Role of Surface Modifications
This work has been motivated by the outstanding need to prepare suitable substrate for growth of III-nitride heteroepitaxial thin films. The issue of lattice and thermal expansion mismatches between the substrates and overlayers, which results in a high threading dislocation density in the films, is seen to be detrimental to photon and carrier transport in these systems. Thus, looking for appropriate substrates or modifying substrates appropriately, has attracted enormous attentions. The work includes the chemical and structural modifications of silicon, gallium arsenide and sapphire substrates, to obtain appropriate characteristics. The work…
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Produktdetails
Weitere Autoren: Kumar, Mahesh / Shivaprasad, S. M.
- ISBN: 978-3-659-43649-9
- EAN: 9783659436499
- Produktnummer: 37418658
- Verlag: LAP Lambert Academic Publishing
- Sprache: Englisch
- Erscheinungsjahr: 2013
- Seitenangabe: 208 S.
- Masse: H22.0 cm x B15.0 cm x D1.2 cm 328 g
- Abbildungen: Paperback
- Gewicht: 328
Über den Autor
He has an excellent academic record with a gold medal in his M. Sc. (Physics) and qualified various national examinations in Physics. After finishing his PhD from IIT Delhi, he got Marie Curie Fellowship for postdoctoral research at UPM Madrid. He has about 45 research publications in the fields of III-Nitrides, Surface Physics and Nanostructures.
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