Current and Breakdown Voltages in 3C-SiC Lateral Power MOSFET
Silicon carbide is the only WBG semiconductor that possesses a high-quality native oxide suitable for use as an MOS insulator in electronic devices. Thermal oxidation of SiC produces a layer of SiO2 on the surface, while the carbon atoms from the SiC form CO, which escapes as a gas. Thus it is possible to make all the devices found in silicon IC technology in SiC, including high quality, stable MOS transistors and MOS integrated circuits.
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Produktdetails
- ISBN: 978-620-2-80089-1
- EAN: 9786202800891
- Produktnummer: 37179560
- Verlag: LAP Lambert Academic Publishing
- Sprache: Englisch
- Erscheinungsjahr: 2020
- Seitenangabe: 68 S.
- Masse: H22.0 cm x B15.0 cm x D0.4 cm 119 g
- Abbildungen: Paperback
- Gewicht: 119
Über den Autor
Author is having research work in the field of wide band gap semiconductor SiC. Presently he is working as an Assistant Professor, Department of Electronics and Communication Engg., Gurukula Kangri Vishwavidayalaya Haridwar, Uttarakhand India. He is having a teaching experience of over 10 years.
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