A Study of Si-Ge Interdiffusion for SiGe based Semiconductor Devices
This book focused on interdiffusion behaviors in SiGe heterostructures under different strain conditions. A unified Si-Ge interdiffusivity model without strain's impact was built over the full Ge fraction range for the first time. It was demonstrated that the unified model is valid for Si-Ge interdiffusion under conventional furnace anneals, and advanced anneal techniques such as soak and spike rapid thermal anneals. In addition, the role of biaxial compressive strain in Si-Ge interdiffusion was fully clarified. Compressive strain can enhance Si-Ge interdiffusion greatly, by tens to a hundred times at certain temperature range. Moreover, some…
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Produktdetails
- ISBN: 978-3-659-58669-9
- EAN: 9783659586699
- Produktnummer: 37429604
- Verlag: LAP Lambert Academic Publishing
- Sprache: Englisch
- Erscheinungsjahr: 2014
- Seitenangabe: 212 S.
- Masse: H22.0 cm x B15.0 cm x D1.3 cm 334 g
- Abbildungen: Paperback
- Gewicht: 334
Über den Autor
Received the Ph.D degree in materials engineering from the University of British Columbia in 2014; expertized in diffusion behaviors in semiconductor materials (Silicon, SiGe and Germanium) and semiconductor process physics.
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