Produktbild
Yuanwei Dong

A Study of Si-Ge Interdiffusion for SiGe based Semiconductor Devices

Buch

This book focused on interdiffusion behaviors in SiGe heterostructures under different strain conditions. A unified Si-Ge interdiffusivity model without strain's impact was built over the full Ge fraction range for the first time. It was demonstrated that the unified model is valid for Si-Ge interdiffusion under conventional furnace anneals, and advanced anneal techniques such as soak and spike rapid thermal anneals. In addition, the role of biaxial compressive strain in Si-Ge interdiffusion was fully clarified. Compressive strain can enhance Si-Ge interdiffusion greatly, by tens to a hundred times at certain temperature range. Moreover, some… Mehr

CHF 103.00

Preise inkl. MwSt. und Versandkosten (Portofrei ab CHF 40.00)

Versandfertig innerhalb 1-3 Werktagen

Produktdetails


  • ISBN: 978-3-659-58669-9
  • EAN: 9783659586699
  • Produktnummer: 37429604
  • Verlag: LAP Lambert Academic Publishing
  • Sprache: Englisch
  • Erscheinungsjahr: 2014
  • Seitenangabe: 212 S.
  • Masse: H22.0 cm x B15.0 cm x D1.3 cm 334 g
  • Abbildungen: Paperback
  • Gewicht: 334

Über den Autor


Received the Ph.D degree in materials engineering from the University of British Columbia in 2014; expertized in diffusion behaviors in semiconductor materials (Silicon, SiGe and Germanium) and semiconductor process physics.

Bewertungen


0 von 0 Bewertungen

Geben Sie eine Bewertung ab!

Teilen Sie Ihre Erfahrungen mit dem Produkt mit anderen Kunden.