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Gang Liu

4H-Silicon Carbide MOSFET

Interface Structure, Defect States and Inversion Layer Mobility

Buch

Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effe… Mehr

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Produktdetails


  • ISBN: 978-3-639-71248-3
  • EAN: 9783639712483
  • Produktnummer: 37716100
  • Verlag: Scholars' Press
  • Sprache: Englisch
  • Erscheinungsjahr: 2014
  • Seitenangabe: 124 S.
  • Masse: H22.0 cm x B15.0 cm x D0.7 cm 203 g
  • Abbildungen: Paperback
  • Gewicht: 203

Über den Autor


Dr. Gang Liu received his Ph.D. in Electrical & Computer Engineering from Rutgers University, Piscataway, NJ, USA, in January 2014. He has been working in Silicon Carbide related field since 2008.

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