Gang Liu
4H-Silicon Carbide MOSFET
Interface Structure, Defect States and Inversion Layer Mobility
Buch
Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effe…
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Beschreibung
Silicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effect of reactive ion etching on the a-face, an important aspect of processing optimum power devices. We correlate electrical measurements, i.e. current-voltage (I-V) and capacitance-voltage (C-V) with physical characterization including X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS).
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Produktdetails
- ISBN: 978-3-639-71248-3
- EAN: 9783639712483
- Produktnummer: 37716100
- Verlag: Scholars' Press
- Sprache: Englisch
- Erscheinungsjahr: 2014
- Seitenangabe: 124 S.
- Masse: H22.0 cm x B15.0 cm x D0.7 cm 203 g
- Abbildungen: Paperback
- Gewicht: 203
Über den Autor
Dr. Gang Liu received his Ph.D. in Electrical & Computer Engineering from Rutgers University, Piscataway, NJ, USA, in January 2014. He has been working in Silicon Carbide related field since 2008.
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